rev.2.00, oct.30. 2003, page 1 of 9 H7N1002AB silicon n channel mos fet high speed power switching rej03g0130-0200z rev.2.00 oct.30.2003 features ? low on-resistance r ds(on) = 8 m ? typ. ? low drive current ? available for 4.5 v gate drive outline to-220ab 1 2 3 1. gate 2. drain (flange) 3. source d g s
H7N1002AB rev.2.00, oct.30. 2003, page 2 of 9 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v drain current i d 75 a drain peak current i d(pulse) note1 300 a body-drain diode reverse drain current i dr 75 a avalanche current i ap note3 50 a avalanche energy e ar note3 166 mj channel dissipation pch note2 100 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1 % 2. value at tc = 25 c 3. value at tch = 25 c, rg 50 ?
H7N1002AB rev.2.00, oct.30. 2003, page 3 of 9 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 100 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 ? ? v i g = 100 a, v ds = 0 gate to source leak current i gss ??10 av gs = 16 v, v ds = 0 zero gate voltage drain current i dss ??10 av ds = 100 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.5 ? 2.5 v i d = 1 ma, v ds = 10 v note1 static drain to source on state r ds(on) ?8 10m ? i d = 37.5 a, v gs = 10 v note1 resistance ? 10 15 m ? i d = 37.5 a, v gs = 4.5 v note1 forward transfer admittance |y fs | 5795? s i d = 37.5 a, v ds = 10 v note1 input capacitance ciss ? 9700 ? pf v ds = 10 v output capacitance coss ? 740 ? pf v gs = 0 reverse transfer capacitance crss ? 330 ? pf f = 1 mhz total gate charge qg ? 155 ? nc v dd = 50 v gate to source charge qgs ? 35 ? nc v gs = 10 v gate to drain charge qgd ? 33 ? nc i d = 75 a turn-on delay time t d(on) ?43?nsv gs = 10 v, i d = 37.5 a rise time t r ? 245 ? ns r l = 0.8 ? turn-off delay time t d(off) ? 130 ? ns r g = 4.7 ? fall time t f ?25?ns body?drain diode forward voltage v df ?0.93?v i f = 75 a, v gs = 0 body?drain diode reverse recovery time t rr ?70?nsi f = 75 a, v gs = 0 dif/ dt = 100 a/ s notes: 1. pulse test
H7N1002AB rev.2.00, oct.30. 2003, page 4 of 9 main characteristics 30 10 3 1 0.3 0.1 0.1 0.3 1 3 10 30 100 50 40 30 20 10 0 2 46810 50 40 30 20 10 0 1 5 0.03 100 ta = 25 c 10 v v gs = 3 v 3.4 v tc = 75 c 25 c -25 c drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics pulse test gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics v ds = 10 v pulse test 100 s 1 ms pw = 10 ms (1shot) dc opera tion (tc = 25 c) 10 s 4 v 3.6 v operation in this area is limited by r ds(on) 2 34 200 150 100 50 0 50 100 150 200 channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating 300
H7N1002AB rev.2.00, oct.30. 2003, page 5 of 9 200 5 20 100 21050 5 10 20 50 1 2 0.5 0.01 100 10 100 10 0.1 1 0.02 0.1 1 static drain to source on state resistance vs. drain current 25 c tc = ?25 c 75 c v ds = 10 v pulse test drain current i d (a) static drain to source on state resistance r ds(on) (m ? ) pulse test static drain to source on state resistance vs. temperature forward transfer admittance vs. drain current case temperature tc ( c) drain current i d (a) static drain to source on state resistance r ds(on) (m ? ) forward transfer admittance |yfs| (s) v gs = 4.5 v 10 v 0.8 0.6 0.4 0.2 0 5 101520 drain to source saturation voltage vs. gate to source voltage 1.0 i d = 50 a 20 a 10 a pulse test gate to source voltage v gs (v) drain to source saturation voltage v ds(on) (v) 40 32 24 16 8 -40 0 40 80 120 160 0 i d = 10 a, 20 a 10 a, 20 a v gs = 4.5 v 10 v pulse test 50 a 50 a 200
H7N1002AB rev.2.00, oct.30. 2003, page 6 of 9 01020304050 2000 5000 10000 1000 100 200 500 200 160 120 80 40 0 20 16 12 8 4 80 160 240 320 400 0 1000 100 1 10 0.1 0.3 1 3 10 30 100 20 50 20000 v gs = 0 f = 1 mhz ciss coss crss i d = 75 a v ds v gs v dd = 25 v 50 v 80 v v dd = 80 v 50 v 25 v r t d(on) t d(off) t t f v gs = 10 v, v dd = 30 v pw = 5 s, duty 1% r g = 4.7 ? typical capacitance vs. drain to source voltage capacitance c (pf) drain to source voltage v ds (v) dynamic input characteristics switching characteristics drain to source voltage v ds (v) gate to source voltage v gs (v) switching time t (ns) gate charge qg (nc) drain current i d (a) body-drain diode reverse recovery time reverse recovery time trr (ns) reverse drain current i dr (a) 0.1 0.3 1 3 10 30 100 1000 100 20 50 200 500 10 di / dt = 100 a / s v gs = 0, ta = 25 c
H7N1002AB rev.2.00, oct.30. 2003, page 7 of 9 d. u. t rg i monitor ap v monitor ds v dd 50 ? vin 15 v 0 i d v ds i ap v (br)dss l v dd e = l i 2 1 v v ? v ar ap dss dss dd 2 200 160 120 80 40 25 50 75 100 125 150 0 i ap = 50 a v dd = 25 v duty < 0.1 % rg > 50 ? channel temperature tch ( c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating avalanche test circuit avalanche waveform 0 0.4 0.8 1.2 1.6 2.0 100 80 60 40 20 v gs = 10 v 5 v pulse test 0, ?5 v reverses drain current vs. source to drain voltage reverse drain current i dr (a) source drain voltage v sd (v)
H7N1002AB rev.2.00, oct.30. 2003, page 8 of 9 vin monitor d.u.t. vin 10 v r l v = 30 v ds tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 90% 10% t f switching time test circuit switching time waveform rg normalized transient thermal impedance vs. pulse width pulse width pw (s) normalized transient thermal impedance s (t) 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 tc = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot p ulse dm p pw t d = pw t ch - c(t) = s (t) ? ch - c ch - c = 1.25 c/ w, tc = 25 c
H7N1002AB rev.2.00, oct.30. 2003, page 9 of 9 package dimensions 0.5 0.1 2.54 0.5 0.76 0.1 14.0 0.5 15.0 0.3 2.79 0.2 18.5 0.5 7.8 0.5 10.16 0.2 2.54 0.5 1.26 0.15 4.44 0.2 2.7 max 1.5 max 11.5 max 9.5 8.0 1.27 6.4 +0.2 ?0.1 3.6 +0.1 ?0.08 package code jedec jeita mass (reference value) to-220ab conforms conforms 1.8 g as of january, 2003 unit: mm
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